Q=An amplifier uses a GaAs HBT device having the following scattering parameters (Zo = 50 Ω). S11...

Q=An amplifier uses a GaAs HBT device having the following scattering parameters (Zo = 50 Ω). S11 = 0.61< −170◦, S12 = 0.06< 70◦, S21 = 2.3< 80◦, and S22 = 0.72< −25◦. The input of the transistor is connected to a source with Vs = 2 V (peak) and ZS = 25 Ω, and the output of the transistor is connected to a load of ZL = 100 Ω. (a) What are the power gain, the available power gain, the transducer power gain, and the unilateral transducer power gain? (b) Compute the available power from the source, and the power delivered to the load.