2. A SiGe HBT device has the following scattering parameters at 2.0 GHz: Su-0.880-115.,S 0.029 31...
2. A SiGe HBT device has the following scattering parameters at 2.0 GHz: Su-0.880-115.,S 0.029 31,S21-9.40 110, and S2-0.328-67,Determine the stability of the device, and plot the stability circles if the device is potentially unstable
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Electrical Engineering
1 Answer
Muhd Fadhlin
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